• Simultaneous measurement of 3-channel photoluminescence and 1-channel DIC laser microscopy using a 355nm laser source
• Deep learning for defect analysis
• DIC Laser Microscopy Surface Inspection
– Reflected DIC laser microscope of excitation source (355nm)
– Carrot, Scratch, Droplets, 3-C triangular defects
• Band edge PL inspection method, additional 2 types of data for user reference
– BPD, Shockley stacking faults, Bar type stacking faults
• Photoluminescence spectral mapping with spectrometer
– Whole wafer mapping
– Spectroscopic analysis for aimed area in map data
• Auto-Navigation Function
– Auto-defect inspection using spectral measurement using PMT mapping and image processing result
– Exact stacking faults classification by spectrum analysis
• Spiral scan with 1800 RPM (Max) rotation stage
– One head type & Two head type (under development)
• Micro PL with 50x objective lens
– 2um beam size
• Multi detectors :
– Default : reflected DIC, Band – edge PL, Spectrometer
Two additional customer designed PL defectors
• Macro mapping for substrate & Epi-wafer can be used for QC
– Growth machine to machine
– Ingot to ingot
– Wafer to wafer in ingot
– Wafer uniformity
> 5 mins/ 6” with 3mm step
• screen capture image of spectrum acquisition process
1. Mapping Image by PMT
2. Cropped Imgae of SF being measured
3. Spectrum ddata of SF
4. Detailed information of SF from spectrum
5. Report of Classified SFs
| Scan method | Spiral scan with 1800 RPM rotation and linear motion | |||
| Laser | 20mW 355nm CW Laser * Beam size on surface : 2um diameter thru 50x objective lens |
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| Detector | 4 PMTs, 1 Spectrometer | |||
| Stage | XY-axis Linear stage R stage with 1800RPM (Max) |
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| Measurement | PMT1 | DIC 355 Laser line for surface inspection | ||
| PMT 2,3,4 | PL Port 2 (PMT 2) : PL Inspection with 390nm bandpass filter PL Port 3 (PMT 3) : 420 nm ~ 500 nm default. But customer choose bandpass filter between these range PL Port 4 (PMT 4) : 3C triangular defects with 540 nm bandpass |
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| CCD camera | Image of designated position in analysis process | |||
| Spectrometer | Spectrum between 380 nm ~ 700 nm Detailed defects analysis, Macroscopic wafer deep level mapping |
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| Measurement speed | 4inch | 6inch | ||
| PMT Mapping (4 channel at same time, 5um step) |
8pcs / 1H | 6pcs / 1H | ||
| 16pcs / 2H | 12 pcs / 2H | |||
| Spectrometer mapping
3mm step |
5 min | |||
| Dimension (mm) | 2000 (w) x 1400 (d) x 2000 (h) | |||
| Operating Environment | Place | Clean Room (class ~ 10000) |
| Temperature | 15 ~ 35° C | |
| Humidity | < 85 % RH with no condensation | |
| Utility | Dimensions | 1500 mm x 2000 mm x 2300 mm, incl. HEPA filter |
| Weight | 1760 kg | |
| Input Voltage | 220V± 10% 50 / 60Hz single phase | |
| Full load current | 47A | |
| Vacuum1 | 40L / min, -80KPa Pipe size : Outer diameter 6mm | |
| Vacuum2 | 120L / min, -40KPa Pipe size : Outer diameter 6mm | |
| Air | 90L / min, 0.5MPa Pipe size : Outer diameter 6mm |
